CLEANING COMPOSITION, AND METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE

摘要

PROBLEM TO BE SOLVED: To provide a cleaning composition capable of sufficiently removing a plasma etching residue on a semiconductor substrate without damaging a wiring structure and an interlaminar insulation structure, and to provide a process for producing a semiconductor device using the cleaning composition.SOLUTION: The cleaning composition for removing a plasma etching residue formed on a semiconductor substrate contains (component a) 57-95 wt.% of water; (component b) 1-40 wt.% of polyhydroxy compound having secondary and/or tertiary hydroxyl groups; (component c) organic acid; and (component d) a quaternary ammonium compound, and its pH is 5-10. The method for manufacturing a semiconductor device includes a step for cleaning the plasma etching residue formed on the semiconductor substrate by the cleaning composition.