| 摘要 |
PROBLEM TO BE SOLVED: To provide a semiconductor memory device equipped with a new bit line hierarchization method enabling the power consumption of the semiconductor memory device to be further reduced.SOLUTION: The semiconductor memory device is equipped with: multiple memory blocks B provided in matrix configuration; and multiple main bit lines GL provided in association with the memory blocks B. The memory block B is equipped with: multiple memory cells C provided in matrix configuration; multiple sub bit lines BL provided for each column; multiple word lines WL provided for each column and row, and common to the multiple memory blocks B; and a switch circuit SC for connecting a corresponding main bit line GL to any of the multiple sub bit lines BL. In the reading operation of an object cell C1 as the object of read, a main bit line GL1 corresponding to the object cell C1 is selected, and a sub-bit line BL1 corresponding to a column of the object cell C1 is selected by the switch circuit SC1, then a word line WL1 corresponding to the column and the row of the object cell C1 is selected from among the multiple word lines WL. |
