| 摘要 |
PROBLEM TO BE SOLVED: To provide a thin-film transistor and its manufacturing method, capable of responding to a request to manufacture it at low cost, and including a step without damages to an oxide semiconductor film used as a semiconductor film; and to provide an integrated circuit including the thin-film transistor, and its manufacturing method.SOLUTION: The manufacturing method of the thin-film transistor includes the steps of: patterning the oxide semiconductor film 3 on a base material 1; forming source-drain connecting regions 3s, 3d on the oxide semiconductor film 3 through an activating process; forming a gate-insulating film 4 through a coating method, a reactive sputtering method, or a pulse-plasma CVD method, in such manner as to cover the oxide semiconductor film 3 on which the source-drain connecting regions 3s, 3d are formed; and opening a contact hole 5 in the gate-insulating film 4 to connect a source-drain electrode 6 to the source-drain connecting regions 3s, 3d, and at the same time forming a gate electrode 7 on the oxide semiconductor film 3. |
