| 摘要 |
<p>Disclosed are a pattern forming method that forms, by an imprint method, a high-resolution pattern that is highly resilient to etching, said pattern forming method being suited to mass production, and a pattern substrate manufacturing method using same. On a substrate (10), a resist layer (20m) (which may include unavoidable impurities) is formed, which is made of a resist composition (20) that includes a polymerizable compound (21) containing polyfunctional monomers that make a polymer having a three-dimensional structure cross-linked by polymerization; and a polymerization initiator (I) that activates by either light or electron beams. An uneven surface of a mold (30), having a prescribed uneven pattern on the surface thereof, is contact pressed upon the resist layer (20m). Light (L1) is projected upon the resist layer (20m), curing the resist layer (20m), and the mold (30) is removed from the resist layer (20m) when the temperature of the resist layer (20m) is greater than or equal to 40 degrees C.</p> |
