| 摘要 |
<p>The disclosed semiconductor device (1) is provided with: a semiconductor substrate (2) having a first surface (2a), a second surface opposite of the first surface (2a), and an electrode pad (5) disposed on the first surface (2a); a through-hole (6) penetrating the semiconductor substrate (2) from the second surface to the first surface (2a) and exposing the electrode pad (5); a through-electrode (9) covering the side surface of the through-hole (6) and the exposed portion of the electrode pad (5), having a bottom surface and a side surface, and electrically connected to the electrode pad (5); and a protective layer (10) filling the through-hole (6), covering the through-electrode (9), and configured by multiple layers (11, 12). That layer of the multiple layers (11, 12) of the protective layer (10) which is nearest the first surface (2a) covers at least the intersection portion positioned between the bottom surface (9a) and the side surface (9b) of the through-electrode (9), and comprises a positive photosensitive resin.</p> |
