| 摘要 |
<p>Disclosed is a semiconductor device wherein a diode region and an IGBT region are formed in a semiconductor layer. In the semiconductor layer, a lifetime control region is formed. The lifetime control region has, in planar view, a first lifetime control region positioned in the diode region, and a second lifetime control region positioned in a part of the IGBT region. The second lifetime control region extends from the boundary between the diode region and the IGBT region toward the inside of the IGBT region. The leading end of the second lifetime control region is positioned, in planar view, within the region where the body region is formed in the IGBT region.</p> |
