| 摘要 |
PROBLEM TO BE SOLVED: To facilitate manufacturing a wafer of an appropriate shape.SOLUTION: A method of manufacturing the wafer includes the steps of: correspondingly storing, in an oxide film thickness information memory 24c, accumulation use hours of a polishing pad 15 and an oxide film thickness to be formed on each region of a wafer W to control a polishing amount of polishing by the polishing pad for the accumulation use hours to a target polishing amount for polishing from a first shape into a second shape and acquiring the accumulation use hours (step S2); detecting the oxide film thickness corresponding to the acquired accumulation used hours (step S3); forming the oxide film of the detected oxide film thickness on each region of the wafer W (step S5); and polishing the wafer with the oxide film formed therein by the polishing pad 15 (step S6). |
