| 摘要 |
PROBLEM TO BE SOLVED: To provide a semiconductor laser element which is small in light absorption and is high in efficiency, and to provide a method of manufacturing the semiconductor laser element.SOLUTION: The semiconductor laser element includes a resonator 110, provided between two reflecting mirrors 116 and 122, and having an active layer 105 and a current path limiting layer 107; a p-type first semiconductor layer 120 positioned opposite to the active layer about the current path limiting layer; and a p-type second semiconductor layer 109 adjoining the first semiconductor layer and positioned between the current-path limiting layer and first semiconductor layer, wherein the first semiconductor layer is doped with carbon atoms of 1×10cmor higher, the second semiconductor layer has a doping concentration of 5×10cmor lower, and in the first semiconductor layer, at least a part 121 of a region which faces a region 107b of the current path limiting layer in which a current flows is a region other than the region of the part of the first semiconductor layer and a region of hydrogen atom concentration higher than that of the second semiconductor layer. |
