| 摘要 |
PROBLEM TO BE SOLVED: To provide, in relation to polishing slurry and polishing method used for polishing in a process for forming wirings of a semiconductor device and the like, a polishing slurry capable of giving a polished surface having high flatness even if the polished surface is made of two or more substances, and further, capable of suppressing metal residues and scratches after polishing, and a method of chemical mechanical polishing using the same.SOLUTION: The polishing slurry contains at least one of a surfactant and an organic solvent, a metal oxide dissolving agent, and water, or contains water and abrasive whose surface has been modified with an alkyl group, and preferably, further contains a metal oxidizer, water-soluble polymer, and metal corrosion inhibitor. |
