发明名称 METHOD FOR MANUFACTURING A MASK HAVING SUBMILLIMETRIC APERTURES FOR A SUBMILLIMETRIC ELECTRICALLY CONDUCTIVE GRID, AND MASK AND SUBMILLIMETRIC ELECTRICALLY CONDUCTIVE GRID
摘要 A process for manufacturing a mask having submillimetric openings, in which: for a masking layer, a first solution of colloidal nanoparticles in a first solvent is deposited, the particles having a given glass transition temperature Tg, the drying of the masking layer, known as the first masking layer, is carried out at a temperature below said temperature Tg until a mask having a two-dimensional network of substantially straight-edged submillimetric openings, that defines a mask zone known as a network mask zone is obtained, a solid mask zone is formed by a liquid deposition, on the face, of a second masking zone, the solid mask zone being adjacent to and in contact with the network mask zone, and/or at least one cover zone is formed, the cover zone being in contact with the network mask zone, and/or after the drying of the first masking layer, a filled mask zone is formed by filling, via a liquid route, openings of a portion of the network mask zone. The invention also relates to the mask and the electroconductive grid obtained.
申请公布号 US2011250387(A1) 申请公布日期 2011.10.13
申请号 US200913120292 申请日期 2009.09.24
申请人 SAINT-GOBAIN GLASS FRANCE 发明人 ZAGDOUN GEORGES;NGHIEM BERNARD;VALENTIN EMMANUEL;TCHAKAROV SVETOSLAV
分类号 B32B3/24;B05D5/12;H01L51/52 主分类号 B32B3/24
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