发明名称 |
METHOD FOR MANUFACTURING PIEZOELECTRIC FILM-TYPE DEVICE |
摘要 |
<p>A substrate (20) is prepared. A "piezoelectric material layer (32a) before baking" that changes to a piezoelectric film by baking is formed above a first principal surface (20a) of the substrate (20). A first mask (131) is formed above the piezoelectric material layer (32a). The "piezoelectric material layer (32a) that is present in a portion in which no first mask (131) is present" is removed by projecting a projection material containing abrasive grains and/or an organic solvent to the first principal surface (20a) of the substrate (20). Thereafter, the first mask (131) is removed, and the piezoelectric material layer (131) is baked. The substrate (20) has a hollow portion (20c), but is not required to have the hollow portion (20c).</p> |
申请公布号 |
WO2011125853(A1) |
申请公布日期 |
2011.10.13 |
申请号 |
WO2011JP58251 |
申请日期 |
2011.03.31 |
申请人 |
NGK INSULATORS, LTD.;SHIMIZU HIDEKI;KITAGAWA MUTSUMI |
发明人 |
SHIMIZU HIDEKI;KITAGAWA MUTSUMI |
分类号 |
B41J2/16;H01L41/09;H01L41/187;H01L41/33 |
主分类号 |
B41J2/16 |
代理机构 |
|
代理人 |
|
主权项 |
|
地址 |
|