发明名称 METHOD FOR MANUFACTURING PIEZOELECTRIC FILM-TYPE DEVICE
摘要 <p>A substrate (20) is prepared. A "piezoelectric material layer (32a) before baking" that changes to a piezoelectric film by baking is formed above a first principal surface (20a) of the substrate (20). A first mask (131) is formed above the piezoelectric material layer (32a). The "piezoelectric material layer (32a) that is present in a portion in which no first mask (131) is present" is removed by projecting a projection material containing abrasive grains and/or an organic solvent to the first principal surface (20a) of the substrate (20). Thereafter, the first mask (131) is removed, and the piezoelectric material layer (131) is baked. The substrate (20) has a hollow portion (20c), but is not required to have the hollow portion (20c).</p>
申请公布号 WO2011125853(A1) 申请公布日期 2011.10.13
申请号 WO2011JP58251 申请日期 2011.03.31
申请人 NGK INSULATORS, LTD.;SHIMIZU HIDEKI;KITAGAWA MUTSUMI 发明人 SHIMIZU HIDEKI;KITAGAWA MUTSUMI
分类号 B41J2/16;H01L41/09;H01L41/187;H01L41/33 主分类号 B41J2/16
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