| 摘要 |
PROBLEM TO BE SOLVED: To improve the reliability of a memory by determining whether data writing is successful or not by using determination information assigned for each of two or more threshold levels which are not adjacent to one another.SOLUTION: A nonvolatile semiconductor memory includes: a plurality of memory cells for storing data of two or more values corresponding to a plurality of threshold levels, respectively; a page buffer having a latch circuit and a sense amplifier circuit corresponding to a column of a memory cell array; and a control circuit for executing data writing to the memory cells and verification. The control circuit executes the verification by using the determination information indicative of a result of the data writing assigned in common to the two or more threshold levels which are not adjacent to one another. |
