| 摘要 |
PROBLEM TO BE SOLVED: To provide a method for producing a polycrystalline silicon ingot enhancing yield of the polycrystalline silicon ingot by reducing a portion having high oxygen concentration in a bottom part, and to provide the polycrystalline silicon ingot.SOLUTION: In the method for producing the polycrystalline silicon ingot by which a silicon melt liquid accumulated in a crucible is solidified in one direction toward an upper part from the bottom part thereof, a silicon nitride coating layer is formed on an inner surface of a sidewall of the crucible and an inner surface of the bottom wall of the crucible, a solidification process in the crucible is classified into a first region from 0 mm to a height X (10 mm≤X<30 mm) on the basis of the bottom surface of the crucible, a second region from the height X to a height Y (30 mm≤Y<100 mm) and a third region higher than the height Y, and a solidification rate V1 in the first region is set in the range of 10 mm/h≤V1≤20 mm/h and a solidification rate V2 in the second region is set in the range of 1 mm/h≤V2≤5 mm/h. |
