| 发明名称 |
SCHOTTKY DIODE WITH IMPROVED SURGE CAPABILITY |
| 摘要 |
An SiC Schottky diode die or a Si Schottky diode die is mounted with its epitaxial anode surface connected to the best heat sink surface in the device package. This produces a substantial increase in the surge current capability of the device.
|
| 申请公布号 |
US2011248284(A1) |
申请公布日期 |
2011.10.13 |
| 申请号 |
US20100903077 |
申请日期 |
2010.10.12 |
| 申请人 |
INTERNATIONAL RECTIFIER CORP. |
发明人 |
CARTA ROSSANO;MERLIN LUIGI;BELLEMO LAURA |
| 分类号 |
H01L29/872 |
主分类号 |
H01L29/872 |
| 代理机构 |
|
代理人 |
|
| 主权项 |
|
| 地址 |
|
