发明名称 |
METHODS OF SELECTIVELY FORMING SILICON-ON-INSULATOR STRUCTURES USING SELECTIVE EXPITAXIAL GROWTH PROCESS |
摘要 |
A method of forming a silicon based optical waveguide can include forming a silicon-on-insulator structure including a non-crystalline silicon portion and a single crystalline silicon portion of an active silicon layer in the structure. The non-crystalline silicon portion can be replaced with an amorphous silicon portion and maintaining the single crystalline silicon portion and the amorphous portion can be crystallized using the single crystalline silicon portion as a seed to form a laterally grown single crystalline silicon portion including the amorphous and single crystalline silicon portions.
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申请公布号 |
US2011250738(A1) |
申请公布日期 |
2011.10.13 |
申请号 |
US201113082861 |
申请日期 |
2011.04.08 |
申请人 |
SAMSUNG ELECTRONICS CO., LTD. |
发明人 |
KANG PIL-KYU;BAE DAE-LOK;CHOI GIL-HEYUN;LEE JONG-MYEONG |
分类号 |
H01L21/20;C03C15/00;G02B6/10 |
主分类号 |
H01L21/20 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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