发明名称 |
SEMICONDUCTOR DEVICE HAVING METAL GATE AND MANUFACTURING METHOD THEREOF |
摘要 |
A semiconductor device includes a semiconductor substrate, a gate dielectric layer formed on the semiconductor substrate, and at least a first conductive-type metal gate formed on the gate dielectric layer. The first conductive-type metal gate includes a filling metal layer and a U-type metal layer formed between the filling metal layer and the gate dielectric layer. A topmost portion of the U-type metal layer is lower than the filling metal layer.
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申请公布号 |
US2011248359(A1) |
申请公布日期 |
2011.10.13 |
申请号 |
US20100759670 |
申请日期 |
2010.04.13 |
申请人 |
HWANG GUANG-YAW;YANG YU-RU;LIAO JIUNN-HSIUNG;CHOU PEI-YU |
发明人 |
HWANG GUANG-YAW;YANG YU-RU;LIAO JIUNN-HSIUNG;CHOU PEI-YU |
分类号 |
H01L29/78;H01L21/8234 |
主分类号 |
H01L29/78 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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