发明名称 |
METHODS OF MAKING SUBSTRATE STRUCTURES HAVING A WEAKENED INTERMEDIATE LAYER |
摘要 |
This invention provides composite semiconductor substrates and methods for fabricating such substrates. The composite structures include a semiconductor substrate, a semiconductor superstrate and an intermediate layer interposed between the substrate and the superstrate that comprises a material that undergoes a structural transformation When subject to a suitable heat treatment. The methods provide such a heat treatment so that the intermediate layer becomes spongy or porous, being filled with numerous micro-bubbles or micro-cavities containing a gaseous phase. The composite semiconductor substrates with structurally-transformed intermediate layers have numerous applications. |
申请公布号 |
US2011250416(A1) |
申请公布日期 |
2011.10.13 |
申请号 |
US201113162230 |
申请日期 |
2011.06.16 |
申请人 |
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发明人 |
BRUEL MICHEL;ASPAR BERNARD;LAGAHE-BLANCHARD CHRYSTELLE |
分类号 |
B32B7/02;B32B3/26;H01L21/762 |
主分类号 |
B32B7/02 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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