| 摘要 |
PROBLEM TO BE SOLVED: To provide a resistance change element capable of binarization or multivalued configuration and of controlling a change in resistance with precision, a memory cell array, and a resistance change device.SOLUTION: The resistance change element is characterized by comprising a first electrode 2, a second electrode 3, and an oxide layer 1 provided between the first electrode 2 and the second electrode 3, wherein the first electrode 2 includes metal, the oxide layer 1 is amorphous and includes Si and O, the concentration of O increases from the first electrode 2 toward the second electrode 3, and there exists at least one region having a local maximum of the concentration gradient of O in the direction of the lamination of the oxide layer 1. |
