| 摘要 |
PROBLEM TO BE SOLVED: To provide a semiconductor device that has high performance while maintaining low-ON resistance, and a method of manufacturing the same.SOLUTION: The semiconductor device includes: a semiconductor layer of a first conductivity type; a first semiconductor region of a second conductivity type provided selectively to the first principal surface of the semiconductor layer; a second semiconductor region of the first conductivity type provided selectively to the first principal surface in contact with the first semiconductor region; a third semiconductor region of the first conductivity type provided selectively to the surface of the first semiconductor region; a fourth semiconductor region of the second conductivity type provided oppositely to a projection surface between the side surface and the bottom surface of the first semiconductor region with the second semiconductor region interposed; and a control electrode provided on the semiconductor layer, first semiconductor region, second semiconductor region, and third semiconductor region with the insulating film interposed. |
