发明名称 WAFER PROCESSING METHOD
摘要 PROBLEM TO BE SOLVED: To provide a wafer processing method that includes a wafer processing process of executing liquid chemical processing, heating treatment or processing accompanied by heat generation, and is capable of reliably processing a wafer without breakage or the like.SOLUTION: The wafer processing method includes a support plate fixing process of fixing a wafer to a support plate through an adhesive composition containing an adhesive component and a gas generator that generates a gas by stimulation, a wafer processing process of executing liquid chemical processing, heating treatment or processing accompanied by heat generation to the surface of the wafer fixed to the support plate, and a support plate peeling process of peeling the support plate from the wafer by stimulating the wafer after processing and generating a gas from the gas generator.
申请公布号 JP2011204793(A) 申请公布日期 2011.10.13
申请号 JP20100068792 申请日期 2010.03.24
申请人 SEKISUI CHEM CO LTD 发明人 SUGITA TAIHEI;NOMURA SHIGERU;FUKUOKA MASATERU
分类号 H01L21/02;C09J7/02;C09J11/06;C09J201/00;C23C14/50;C23C16/458 主分类号 H01L21/02
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