NITRIDE SEMICONDUCTOR ELEMENT AND MANUFACTURING METHOD THEREFOR

摘要

The disclosed nitride semiconductor element is provided with: a layered nitride semiconductor structure (20) that has a p-type semiconductor region, the surface (12) of which is inclined at an angle between 1° and 5° with an m-plane; and an electrode (30) provided on top of the p-type semiconductor region. The p-type semiconductor region is formed from an AlxInyGazN (x+y+z = 1, x = 0, y = 0, z = 0) layer (26). The electrode (30) contains a magnesium layer (32) and a silver layer (34) formed on top of the magnesium layer (32). The magnesium layer (32) is in contact with the surface (12) of the p-type semiconductor region in the layered semiconductor structure (20).