| 摘要 |
PROBLEM TO BE SOLVED: To provide a light-emitting device including multi-layer stack comprising a plurality of materials, and related components, systems and methods.SOLUTION: The light-emitting device includes a multi-layer stack 122 comprising a plurality of materials. The multi-layer stack 122 includes a silicon-added (n-type) GaN layer 134, which has on its upper surface 110 a pattern comprising a plurality of openings 150. The multi-layer stack 122 also includes an adhesion layer 124, a silver layer 126, a magnesium-added (p-type) GaN layer 128, a light generating region 130 formed of a plurality of InGaN/GaN quantum wells, and an AlGaN layer 132. |
