| 摘要 |
PROBLEM TO BE SOLVED: To achieve reduction in via resistance and facilitation of processes while using a carbon nanotube (CNT) as a contact material in a via hole.SOLUTION: A semiconductor device which uses CNTs for vias between wiring layers include an interlayer insulating film 19 provided on a substrate having Cu wirings 17 on a surface, via holes formed in the interlayer insulating film 19 and connected to the Cu wirings 17, first metal films 21 formed selectively on the Cu wirings 17 exposed in the via holes to serve as barriers for the Cu wiring 17s and also as promoters for growth of CNTs, second metal films 22 formed at least on the first metal films 21 in the via holes to serve as a catalyst for the growth of the CNTs, and the CNTs 23 formed in the via holes wherein the first and second metal films 21 and 22 are formed. |
