FILM DEPOSITION APPARATUS

摘要

PROBLEM TO BE SOLVED: To provide a film deposition apparatus capable of easily forming a film of uniform thickness and uniform composition.SOLUTION: The film deposition apparatus A generates plasma P under the atmospheric pressure, and executes the film deposition by depositing a film raw material on the surface of a workpiece W by using the plasma P. The film deposition apparatus includes a first flow passage 5 for distributing film deposition gas CG containing the film raw material, a second flow passage 9 for distributing plasma generating gas PG, an electrode 3 for generating plasma P by applying the electric field E to the plasma generating gas CG, and a merging unit 14 for merging the first flow passage 5 with the second flow passage 9. The first flow passage 5 is formed in the second flow passage 9 so that the flow-in direction of the film deposition gas CG from the first flow passage 5 to the merging unit 14 is substantially parallel to the distributing direction of the plasma P at the merging unit 14.