| 摘要 |
PROBLEM TO BE SOLVED: To provide an oxide deposition material capable of consistently manufacturing a transparent conductive film having low resistance and high light transmissivity even when the amount of oxygen to be introduced during the film deposition is small, and a transparent conductive film to be manufactured by using the oxide deposition material.SOLUTION: The oxide deposition material comprises a sintered oxide that consists primarily of indium oxide and also contains tin, with the Sn/In atomic ratio of 0.001 to 0.614. The oxide deposition material is characterized by an L* value in the CIE 1976 color system between 54 and 75. Due to an optimal oxygen content, the oxide deposition material with the L* value between 54 and 75 allows the manufacture, via the vacuum deposition method, of a transparent conductive film having low resistance and high transparency in the visible-light region, even if the amount of oxygen gas to be introduced into a film deposition vacuum chamber is low. A low amount of introduced oxygen gas reduces the difference in composition between the film and the deposition material, reducing variations in film composition and characteristics during mass production. |
