发明名称 SPUTTERING APPARATUS AND SPUTTERING METHOD
摘要 PROBLEM TO BE SOLVED: To provide a sputtering apparatus capable of preventing deposition of a film forming material on the surface in a region except for a substrate on a substrate holder and improving quality and productivity of the film formed on the substrate.SOLUTION: The sputtering apparatus includes: a vacuum chamber 1 which can be evacuated; a substrate holder 40, which is arranged inside the vacuum chamber 1 and provided with holding mechanisms 30, 31 for holding a substrate 8 with the surface to be treated facing downward; a cathode electrode 10 to which electric power for discharge is supplied, disposed directly below the substrate holder 40 to face the substrate 8; and a target 16 supported in the substrate side of the cathode electrode 10. The substrate holder 40 includes heating mechanisms 60, 61 for heating the surface of a region excluding the substrate to a temperature equal to or higher than the decomposition or evaporation temperature of the film forming material for forming a film on the substrate 8.
申请公布号 JP2011202190(A) 申请公布日期 2011.10.13
申请号 JP20080166756 申请日期 2008.06.26
申请人 CANON ANELVA CORP 发明人 ISHIBASHI KEIJI
分类号 C23C14/50;C23C14/06;C23C14/34;H01L21/203 主分类号 C23C14/50
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