| 摘要 |
The present invention relates to a high-speed transistor device and a method for fabricating the same. A high-speed transistor device is proposed, comprising: a silicon substrate; and a gate stack formed on the silicon substrate. The gate stack comprises a gate dielectric stack and a gate electrode layer, and the gate dielectric stack comprises at least a SrTiO3 layer and a LaAlO3 layer positioned thereon. The electron concentration is improved by the two-dimensional electron gas generated ascribing to a triangular potential well formed between the SrTiO3 layer and the LaAlO3 layer. Meanwhile, since the channel is formed between the SrTiO3 layer and the LaAlO3 layer, the electrons and the scattering center are seperated from each other, such that the electron mobility is enhanced, which accordingly improves the speed of the transistor device.
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