| 摘要 |
A coating film is formed on a member to be etched, which includes an amorphous carbon film and a silicon oxynitride film, by a spin coating method; a sidewall core is formed by pattering the coating film; a silicon oxide film is formed to cover at least the side surface of the sidewall core; and an organic anti-reflection film is formed on the silicon oxide film by a spin coating method. Thereafter, an embedded mask is formed to cover concave portions of the silicon oxide film by etching the organic anti-reflection film; exposed is a portion of the member to be etched which does not overlap the sidewall core or the embedded mask by etching the silicon oxide film; and the member to be etched is etched. Thus, it is possible to obtain a pattern with a size less than the photolithography resolution limit.
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