LDMOS TRANSISTORS FOR CMOS TECHNOLOGIES AND AN ASSOCIATED PRODUCTION METHOD

摘要

In a semiconductor component, a lateral power field effect transistor is produced as an LDMOS transistor in such a way that, in combination with a trench isolation region (12) and a heavily doped field guiding region (28, 28A), an improved potential profile is achieved in a drain drift region (8) of the transistor. For this purpose, in advantageous embodiments, it is possible to use standard implantation processes of CMOS technology, without additional method steps being required.