发明名称 |
SELF-ALIGNED CONTACTS FOR FIELD EFFECT TRANSISTOR DEVICES |
摘要 |
<p>A method for forming a field effect transistor includes forming a gate stack, a spacer adjacent to opposing sides of the gate stack, a silicide source region and a silicide drain region on opposing sides of the spacer, epitaxially growing silicon on the source region and the drain region; forming a liner layer on the gate stack and the spacer, removing a portion of the liner layer to expose a portion of the hardmask layer, removing the exposed portions of the hardmask layer to expose a silicon layer of the gate stack, removing exposed silicon to expose a portion of a metal layer of the gate stack, the source region, and the drain region; and depositing a conductive material on the metal layer of the gate stack, the silicide source region, and the silicide drain region.</p> |
申请公布号 |
WO2011126682(A1) |
申请公布日期 |
2011.10.13 |
申请号 |
WO2011US28464 |
申请日期 |
2011.03.15 |
申请人 |
INTERNATIONAL BUSINESS MACHINES CORP.;GUO, DECHAO;HAENSCH, WILFRIED E.;WANG, XINHUI;WONG, KEITH KWONG HON |
发明人 |
GUO, DECHAO;HAENSCH, WILFRIED E.;WANG, XINHUI;WONG, KEITH KWONG HON |
分类号 |
H01L29/78;H01L23/48 |
主分类号 |
H01L29/78 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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