POLISHING SLURRY AND POLISHING METHOD THEREFOR

摘要

In order to provide a polishing technique by which a silicon carbide that is difficult to polish can be polished with high efficiency and high surface precision, a polishing slurry for polishing substrates is characterized in that the abrasive particles have a manganese oxide as the main component, and the content of the abrasive particles is less than 10 wt% of the polishing slurry. The pH of the polishing slurry is preferably 7 or higher, and it is particularly preferable to use a manganese dioxide as the abrasive particles. In addition, the polishing slurry is suitable for silicon carbide substrates.