THIN FILM TRANSISTOR SUBSTRATE AND METHOD FOR MANUFACTURING SAME

摘要

Disclosed is a method for manufacturing a thin film transistor substrate, which comprises: a step wherein a gate electrode (14) is formed on a substrate (10a); a step wherein after forming a gate insulating film (15) so as to cover the gate electrode (14), an In-Ga-Zn-O oxide semiconductor layer (16) is formed on the gate insulating film (15) so as to overlap the gate electrode (14), said In-Ga-Zn-O oxide semiconductor layer (16) having an In:Ga:Zn atomic percentage ratio of 1:1:1 or 4:5:1; a step wherein a source electrode (19a) and a drain electrode (19b) are formed on the oxide semiconductor layer (16) so as to overlap the gate electrode (14) and face each other; and a step wherein the substrate (10a), which has been provided with the source electrode (19a) and the drain electrode (19b), is subjected to an annealing treatment in an atmosphere that contains water vapor (S).