| 摘要 |
PROBLEM TO BE SOLVED: To provide a polycrystalline silicon ingot in which many crystals in the (001), (111) orientation are present, in the base of which few parts have a high oxygen concentration, and which is significantly improved in the production yield, and to provide a manufacturing method for the polycrystalline silicon ingot.SOLUTION: In the manufacturing method for the polycrystalline silicon ingot, a silicon melt is unidirectionally solidified in an upward direction from the bottom surface. Silica multilayer coating layers 27 are disposed on the bottom surface of a crucible 20, and using the bottom surface of the crucible 20 as a base, the solidification process in the crucible 20 is classified in three regions: a first region A1 from 0 mm to height X (10 mm≤X<30 mm); a second region A2 from height X to height Y (30 mm≤Y<100 mm); and a third region A3 from at least height Y. The solidification rate (V1) in the first region A1 is set in the range of 10 mm/h≤V1≤20 mm/h, and the solidification rate (V2) in the second region A2 is set in the range of 1 mm/h≤V2≤5 mm/h. |
