发明名称 REFLECTION TYPE MASK, ALIGNER, EXPOSURE METHOD, AND DEVICE MANUFACTURING METHOD
摘要 PROBLEM TO BE SOLVED: To provide a reflection type mask, an aligner, an exposure method, and a device manufacturing method for effectively reducing a contaminating substance.SOLUTION: The reflection type mask (R) having a pattern domain (Ra) in which a reflection pattern is formed includes additionally a non-pattern domain (Rb) for reflecting or scattering incident light in a direction different from the reflecting direction of the pattern domain (Ra).
申请公布号 JP2011204864(A) 申请公布日期 2011.10.13
申请号 JP20100070113 申请日期 2010.03.25
申请人 NIKON CORP 发明人 AOKI TAKASHI
分类号 H01L21/027;B08B7/00 主分类号 H01L21/027
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