SEMICONDUCTOR MEMORY DEVICE AND DRIVING METHOD OF SEMICONDUCTOR MEMORY DEVICE

摘要

PROBLEM TO BE SOLVED: To provide a semiconductor device which stores data using a transistor having a low leakage current between a source and a drain in an OFF state as a write transistor.SOLUTION: A matrix is formed using a plurality of storage cells in each of which a drain of the write transistor is connected to a gate of a read transistor and the drain is connected to one electrode of a capacitor; the gate of the write transistor is connected to a write word line; a source of the write transistor is connected to a write bit line, and a source and a drain of a read transistor are connected to the read bit line and a bias line, respectively. Further, the other electrode of the capacitor is connected to a read word line. To reduce the number of wirings, the write word line to which the gate of the write transistor is not connected is used as a substitute for the read word line, and the write bit line is used as a substitute for the read bit line.