SEMICONDUCTOR INTEGRATED CIRCUIT DEVICE

摘要

PROBLEM TO BE SOLVED: To provide a semiconductor integrated circuit device that can control a substrate voltage of an MOSFET without causing a drain current to depend upon a temperature or a process variation.SOLUTION: The semiconductor integrated circuit device includes: an integrated circuit body 16B having multiple N-type MOSFETs on a semiconductor substrate; a monitor unit 15B that monitors a drain current of one of the N-type MOSFETs; and a substrate voltage adjusting unit 14B that controls a substrate voltage of the semiconductor substrate so as to keep the drain current constant. The monitor unit includes a current source 12B and a monitor N-type MOSFET 11B. The substrate voltage adjusting unit compares the drain potential of the monitor N-type MOSFET and reference potential and feeds back an output voltage based on the comparison result to the substrate voltage of the monitor N-type MOSFET. The monitor unit includes an N-type MOSFET for leak current cancellation which adds a source-drain current to the drain of the monitor N-type MOSFET when a gate and a source of the N-type MOSFET for leak current cancellation have substantially equal potential.