| 摘要 |
PROBLEM TO BE SOLVED: To provide a photoelectric conversion semiconductor device featuring low cost and good photoelectric conversion efficiency.SOLUTION: A photoelectric conversion device 1 includes a photoelectric conversion semiconductor layer 10, a first electrode 30 formed in contact with a light-absorbing surface (front surface) 10s of the photoelectric conversion semiconductor layer 10, and a second electrode 40 formed in contact with a rear surface 10r of the photoelectric conversion semiconductor layer 10. The photoelectric conversion semiconductor layer 10 is a monograin film including a binder layer 12 and a plurality of separate photoelectric conversion semiconductor grains 11 with a mean grain diameter of 1 μm or more and 60 μm or less. At least part of the photoelectric conversion semiconductor grains 11 are embedded in the binder layer 12. At least part of the plurality of the photoelectric conversion semiconductor grains 11 have at least one stacking fault 13 in the photoelectric conversion semiconductor grains 11, and part of the photoelectric conversion semiconductor grains 11 is in contact with the second electrode 40 at the rear surface 10r, and part of the photoelectric conversion semiconductor grains 11 is in contact with the first electrode 30 at the front surface 10s via the buffer layer 20. |
