| 摘要 |
PROBLEM TO BE SOLVED: To provide a driving circuit which is adapted, for a semiconductor device which exhibits a diode characteristic of flowing an abrupt current if the gate-source voltage therein exceeds a predetermined voltage, to have the functions of reducing electric-power consumption in a high-load state, reducing the loss in the driving circuit in low-load states, preventing excessive voltages, excessive currents and excessive electric-power consumption, and reducing the loss in the semiconductor device.SOLUTION: Gate control means (2, 12, 22, and 32) in a driving circuit is configured to control a voltage or a current to be supplied to a gate of a semiconductor element according to a signal indicating a semiconductor element operation state which is inputted from operation state detecting means (4, 5, and 6) that detect an operation state of the semiconductor element (1) which exhibits diode characteristics that a precipitous current flows when a voltage between a gate and a source exceeds a predetermined voltage. |
