| 摘要 |
Disclosed is a nitrogen compound semiconductor light emitting element which has an N type layer comprising AlGaN, an active layer comprising AlGaInN, and a P type layer, which emits UV light with emission peak wavelength of 400nm or less, and which has a high emission intensity; also disclosed is a manufacturing method thereof. In the disclosed nitrogen compound semiconductor light emitting element having an N type layer, an active layer and a P type layer, the active layer comprises a nitrogen compound semiconductor layer with emission peak wavelength of 400nm or less and comprising AlGaInN. The N type layer is configured to have an N type AlGaN layer comprising AlGaN, and a GaN protective layer not containing Al and at least 5nm thick. The active layer is formed on the protective layer. The manufacturing method involves steps for growing the N type AlGaN layer at a high substrate temperature of 1000°C or higher, growing the GaN protective layer thereon not containing Al and at least 5nm thick, interrupting the growth process and lowering the substrate temperature, and forming the active layer on the protective layer at a low substrate temperature of 1000°C or less. |
