| 摘要 |
PROBLEM TO BE SOLVED: To provide a semiconductor device capable of preventing progressive corrosion inside a gate electrode, and to provide a manufacturing method for the device.SOLUTION: A semiconductor device 100 includes a compound semiconductor substrate 101, a gate electrode 118, containing aluminum and having a connection 119 formed on a part of the compound semiconductor substrate 101 and a body 117 formed on the connection 119 to be broader than the connection 119;, a protective insulating layer (silicon nitride film 120), arranged on the surface of the gate electrode 118; and a passive film 124; which is less easily oxidizable than aluminum and is arranged on the surface of the gate electrode 118 which is not covered by the silicon nitride film 120. |
