SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING SAME

摘要

Disclosed is a semiconductor device which comprises: an interlayer insulating film; a wiring line that is formed on the interlayer insulating film so as to protrude therefrom and is composed of a material that contains copper as a main component; and a passivation film that is formed so as to cover the wiring line. The passivation film is composed of a laminated film wherein a first nitride film, an intermediate film and a second nitride film are laminated in this order from the wiring line side. The intermediate film is formed of an insulating material (for example, an oxide) that is different from those of the first and second nitride films.