发明名称 PHASE SHIFT MASK BLANK, MANUFACTURING METHOD THEREOF, AND PHASE SHIFT MASK
摘要 <p>Disclosed are a phase shift mask blank and a manufacturing method thereof capable of increasing the mask service life and of improving the resistance to light of an optical semitransparent film (a phase shift film) configured from a material having as main components nitrogen, silicon and a transition metal for exposure light of wavelength 200nm or less; also disclosed is the phase shift mask. The phase shift mask blank, which is used for creating phase shift masks suitable for ArF excimer laser exposure, is provided with an optical semi-transmissive film on a transparent substrate, wherein the optical semi-transmissive film is configured from an incomplete nitridation film having as main components nitrogen, silicon and a transition metal, and the content ratio of the transition metal to the transition metal and the silicon in the optical semi-transmissive film is less than 9%.</p>
申请公布号 WO2011125337(A1) 申请公布日期 2011.10.13
申请号 WO2011JP02090 申请日期 2011.04.08
申请人 HOYA CORPORATION;NOZAWA, OSAMU;SHISHIDO, HIROAKI;SAKAI, KAZUYA 发明人 NOZAWA, OSAMU;SHISHIDO, HIROAKI;SAKAI, KAZUYA
分类号 C23C14/06;G03F1/32;G03F1/54 主分类号 C23C14/06
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