发明名称 SEMICONDUCTOR NANO COMPOSITE STRUCTURE THIN FILM MATERIAL AND METHOD OF MANUFACTURING THE SAME
摘要 PROBLEM TO BE SOLVED: To provide a semiconductor nano composite structure thin film material suitable for use as an optical electronic element where there is provided a structure which three-dimensionally and uniformly disperses a semiconductor nano scale particle in a matrix, and low cost is achieved, and a method for manufacturing the same.SOLUTION: The semiconductor nano composite structure thin film material (1) expressed by a general expression (PbZn)M(where: 26≤x<50; M: one kind or two kinds of S, Se and Te; and the suffix of each element represents an atomic ratio) includes a composite structure where a PbM phase as the semiconductor nano scale particle (2) is uniformly dispersed in the ZnM phase as a matrix (3). The thin film material is formed into a film by a gaseous phase film forming method where an environment close to a thermally balanced state is achieved by using a thermal dynamic phase separation function of a compound composition expressed by a general expression.
申请公布号 JP2011204967(A) 申请公布日期 2011.10.13
申请号 JP20100071838 申请日期 2010.03.26
申请人 RESEARCH INSTITUTE FOR ELECTROMAGNETIC MATERIALS 发明人 ABE YOTSUGI
分类号 H01L31/04 主分类号 H01L31/04
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