| 摘要 |
PROBLEM TO BE SOLVED: To provide a polishing pad with excellent flattening characteristics and capable of restraining generation of scratches, and to provide a method of manufacturing a semiconductor device using the polishing pad.SOLUTION: In the polishing pad including a polishing layer having elliptical gas bubbles 12, the long axis of the elliptical gas bubbles is inclined at 5-45 degrees to the thickness direction of the polishing layer. |
