| 摘要 |
PROBLEM TO BE SOLVED: To achieve low-voltage charge transfer by suppressing expansion of a depletion layer during charge transfer from a charge holding part to an FD (Floating Diffusion) and also preventing a transfer path from the charge holding part to the FD from becoming narrow.SOLUTION: A photoelectric conversion part 101, the charge holding part 102, a transfer part 103, and a sense node 104 are formed in a P-type well 107. The charge holding part 102 is constituted including an N-type semiconductor region 110 as a first semiconductor region for holding electric charge at a place different from the photoelectric conversion part. A P-type semiconductor region 111 having a higher concentration than the P-type well 107 is arranged below the N-type semiconductor region 110. |
