SILICON EPITAXIAL WAFER, METHOD FOR MANUFACTURING SILICON EPITAXIAL WAFER, AND METHOD FOR MANUFACTURING SEMICONDUCTOR ELEMENT OR INTEGRATED CIRCUIT

摘要

Disclosed is a silicon epitaxial wafer having an epitaxial layer formed on a silicon substrate, wherein the silicon substrate is doped with phosphorus or boron at a concentration of 2.0×1019 atoms/cm3 or more, a CVD oxide film is formed at least on the rear surface, a carbon ion-implanted layer is formed by implanting carbon ions from the front surface, and the epitaxial layer is formed on the front surface where the carbon ion-implanted layer is formed. The silicon epitaxial wafer is composed of the epitaxial layer having a desired resistivity necessary to obtain predetermined electrical characteristics of an element, and a substrate having a lower resistivity compared with conventional substrates, and is capable of improving the electrical characteristics of a low breakdown strength power MOS, a middle breakdown strength power MOS, an image pick-up element and the like, and the silicon epitaxial wafer has auto-doping and out diffusion more strongly suppressed when performing epitaxial growing and heat treatment in an element manufacture step, compared with the conventional silicon epitaxial wafers.