INTEGRATED PLASMONIC NANOCAVITY SENSING DEVICE

摘要

An integrated plasmonic sensing device (100) is described wherein the integrated device (100) comprises: at least one optical source (106) comprising a first conductive layer (102) and a second conductive layer (111), and an active optical source layer (110) between at least part of said first and second conductive layers (102, 111); at least one nanocavity (101) extending through said first and second conductive layers and said active optical source layer, wherein said optical source (106) is configured to generate surface plasmon modes suitable for exciting one or more resonances in said nanocavity (101); and, at least one optical detector (104) comprising at least one detection region formed in the vicinity of said nanocavity resonator, wherein said optical detector (104) is configured to sense excited resonances in said nanocavity (101).