| 摘要 |
<p>A light emitting device includes a light emitting structure comprising a first conductivity type semiconductor layer (110), a second conductivity type semiconductor layer (130) and an active layer (120) disposed between the first conductivity type semiconductor layer and the second conductivity type semiconductor layer to emit a light of a first wavelength; and a re-emission layer (140) disposed on the light emitting structure, the re-emission layer comprising a nitride semiconductor, wherein the re-emission layer absorbs the light of the first wavelength range and the re-emission layer emits a light of a second wavelength range longer than the first wavelength range, and the re-emission layer is configured of multi layers having different indium (In) compositions, respectively, and the indium content in the multi-layer is largest in a top layer of the multi-layers.</p> |
