发明名称 METHODS FOR FORMING STAIR-TYPED STRUCTURES AND METHODS FOR MANUFACTURING NONVOLATILE MEMORY DEVICES USING THE SAME
摘要 Methods of manufacturing stair-type structures and methods of manufacturing nonvolatile memory devices using the same. Methods of manufacturing stair-type structures may include forming a plurality of thin layers stacked in plate shapes, forming a mask on an utmost thin layer, patterning the utmost layer using the mask as an etch mask, escalating a width of the mask and etching each of the thin layers at a different width of the mask to form a stair-type structure of the thin layers. Control gates may be formed into the stair-type structures using the methods of manufacturing stair-type structures.
申请公布号 KR20110111809(A) 申请公布日期 2011.10.12
申请号 KR20100031073 申请日期 2010.04.05
申请人 SAMSUNG ELECTRONICS CO., LTD. 发明人 KIM, HA NA;MIN, GYUNG JIN;SHIN, CHUL HO;JOO, SUK HO;YU, HAN GEUN;HAN, YEONG HUN
分类号 H01L21/8247;H01L27/115 主分类号 H01L21/8247
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