METHODS FOR FORMING STAIR-TYPED STRUCTURES AND METHODS FOR MANUFACTURING NONVOLATILE MEMORY DEVICES USING THE SAME
摘要
Methods of manufacturing stair-type structures and methods of manufacturing nonvolatile memory devices using the same. Methods of manufacturing stair-type structures may include forming a plurality of thin layers stacked in plate shapes, forming a mask on an utmost thin layer, patterning the utmost layer using the mask as an etch mask, escalating a width of the mask and etching each of the thin layers at a different width of the mask to form a stair-type structure of the thin layers. Control gates may be formed into the stair-type structures using the methods of manufacturing stair-type structures.
申请公布号
KR20110111809(A)
申请公布日期
2011.10.12
申请号
KR20100031073
申请日期
2010.04.05
申请人
SAMSUNG ELECTRONICS CO., LTD.
发明人
KIM, HA NA;MIN, GYUNG JIN;SHIN, CHUL HO;JOO, SUK HO;YU, HAN GEUN;HAN, YEONG HUN