METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE WITH BURIED GATE,申请号KR20100030956-传众专利搜索

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发明名称	METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE WITH BURIED GATE
摘要
申请公布号	KR20110111730(A)	申请公布日期	2011.10.12
申请号	KR20100030956	申请日期	2010.04.05
申请人	HYNIX SEMICONDUCTOR INC.	发明人	CHO, JIK HO;YEOM, SEUNG JIN;HONG, SEUNG HEE;LEE, NAM YEAL
分类号	H01L21/336;H01L29/78	主分类号	H01L21/336
代理机构		代理人
主权项
地址

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